Postes actifs de Jr-Tai Chen
| Sociétés | Poste | Début | Fin |
|---|---|---|---|
SweGaN AB
 SweGaN AB Electronic Production EquipmentElectronic Technology SweGaN AB supplies nitride based HEMT structures. Its technology includes hot-wall MOCVD, ultra-low thermal boundary resistance, isotope enriched SiC, and structural quality of GaN. The firm specializes in epitaxial growth, device processing, device modeling, material characterization, device characterization. The company was founded by Jr-Tai Chen and Olof Kordina in 2014 and is headquartered in Linkoping, Sweden. | Directeur/Membre du Conseil | - | - |
| Directeur Général | - | - | |
| Fondateur | 01/01/2014 | - | |
| Directeur Technique/Scientifique/R&D | 01/01/2014 | - |
Historique de carrière de Jr-Tai Chen
Statistiques
Internationale
| Suède | 2 |
Opérationnelle
| Director/Board Member | 1 |
| Chief Executive Officer | 1 |
| Chief Tech/Sci/R&D Officer | 1 |
Sectorielle
| Electronic Technology | 2 |
Fonctions occupées
Actives
Inactives
Sociétés cotées
Entreprise privées
Sociétés liées
| Entreprise privées | 1 |
|---|---|
SweGaN AB
SweGaN AB Electronic Production EquipmentElectronic Technology SweGaN AB supplies nitride based HEMT structures. Its technology includes hot-wall MOCVD, ultra-low thermal boundary resistance, isotope enriched SiC, and structural quality of GaN. The firm specializes in epitaxial growth, device processing, device modeling, material characterization, device characterization. The company was founded by Jr-Tai Chen and Olof Kordina in 2014 and is headquartered in Linkoping, Sweden. | Electronic Technology |
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