Dimitri Antoniadis
Corporate Officer/Principal chez Massachusetts Institute of Technology
Profil
Dimitri Antoniadis has been a Director of Ibis Technology Corp.
since 1996.
Dr. Antoniadis is the Ray and Maria Stata Professor of Electrical Engineering at the Massachusetts Institute of Technology and has been a Member of the Faculty since 1978.
Postes actifs de Dimitri Antoniadis
| Sociétés | Poste | Début |
|---|---|---|
| Massachusetts Institute of Technology | Corporate Officer/Principal | 01/01/1978 |
Anciens postes connus de Dimitri Antoniadis
| Sociétés | Poste | Fin |
|---|---|---|
Ibis Technology Corp.
 Ibis Technology Corp. SemiconductorsElectronic Technology Ibis Technology Corp. develops, manufactures and markets SIMOX-SOI implantation equipment for the worldwide semiconductor industry. SIMOX creates an insulating oxide barrier below the top surface of a silicon wafer through implantation and annealing. The company's proprietary oxygen implanters produce SIMOX-SOI wafers by implanting oxygen atoms just below the surface of a silicon wafer to create a very thin layer of silicon dioxide between the thin operating region of the transistor at the surface and the underlying silicon wafer itself. It was founded in October 1987. | Directeur/Membre du Conseil | 17/02/2009 |
Expériences
Fonctions occupées
Relations
Relations au 1er degré
Entreprises liées au 1er degré
Homme
Femme
Administrateurs
Exécutifs
Sociétés liées
| Entreprise privées | 1 |
|---|---|
Ibis Technology Corp.
Ibis Technology Corp. SemiconductorsElectronic Technology Ibis Technology Corp. develops, manufactures and markets SIMOX-SOI implantation equipment for the worldwide semiconductor industry. SIMOX creates an insulating oxide barrier below the top surface of a silicon wafer through implantation and annealing. The company's proprietary oxygen implanters produce SIMOX-SOI wafers by implanting oxygen atoms just below the surface of a silicon wafer to create a very thin layer of silicon dioxide between the thin operating region of the transistor at the surface and the underlying silicon wafer itself. It was founded in October 1987. | Electronic Technology |